Previous Page  37 / 39 Next Page
Information
Show Menu
Previous Page 37 / 39 Next Page
Page Background

Volume 4

Nano Research & Applications

ISSN: 2471-9838

Page 96

JOINT EVENT

August 16-18, 2018 | Dublin, Ireland

&

12

th

Edition of International Conference on

Nanopharmaceutics and Advanced Drug Delivery

25

th

Nano Congress for

Future Advancements

Nano Congress 2018

&

Nano Drug Delivery 2018

August 16-18, 2018

Nano Res Appl 2018, Volume 4

DOI: 10.21767/2471-9838-C3-015

Sub-oxide passivation of silicon nanoparticles produced by mechanical attrition

David Moweme Unuigbe

University of Cape Town, South Africa

T

he presence of native oxide on the surface of silicon nanoparticles is renowned for constraining charge transport on the

surfaces. Studies carried out using scanning electron microscopy (SEM) shows that the particles in the printed silicon

network have a wide range of shapes and sizes. High-resolution transmission electron microscopy reveals that the particle

surfaces are dominated by the (111)- and (100)-oriented planes which stabilizes against further oxidation of the particles.

X-ray absorption spectroscopy (XANES) and X-ray photoelectron spectroscopy (XPS) measurements at the O 1s-edge have

been utilized to study the oxidation and local atomic structure of printed layers of silicon nanoparticles which were milled

for different times. XANES results reveal the presence of the +4 (SiO

2

) oxidation state which tends towards the +2 (SiO) state

for higher milling times. Si 2p XPS results indicate that the surfaces of the silicon nanoparticles in the printed layers are only

partially oxidized and that all three sub-oxide, +1 (Si

2

O), +2 (SiO) and +3 (Si

2

O

3

), states are present. The analysis of the change

in the sub-oxide peaks of the silicon nanoparticles shows the dominance of the +4 state only for lower milling times.

david.unuigbe@hotmail.com