

Page 48
Volume 4
December 10-12, 2018
Rome, Italy
Nano Research & Applications
ISSN: 2471-9838
Advanced Materials 2018
Nano Engineering 2018
JOINT EVENT
22
nd
International Conference on
Advanced Materials
and Simulation
&
22
nd
Edition of International Conference on
Nano Engineering &
Technology
I
n this work, we report on some of the fundamental chemical
and physical processes responsible for the deposition of
graphene by plasma enhanced chemical vapor deposition
(PECVD). The graphene is grown by plasma decomposition
of a methane and hydrogen mixture (CH
4
/H
2
) at moderate
pressures over polycrystalline metal catalysts. In situ optical
emission spectroscopy (OES) technique was used to measure
the rotational temperature of the plasma and the H-atom
relative concentration under different experimental conditions
obtained by varying the plasma power (300-400 W), total
pressure (10-25 mbar), substrate temperature (700-1000°C),
methane flow rate (1-10 sccm) and catalyst nature (Co-Cu).
Then, three complementary modeling approaches (0D, 1D
and 2D) were developed to analyze the plasma environment
during graphene growth. The transient zero-dimensional
(0D) configuration was used for evaluation of the effects of
reactor conditions and permits the identification of dominant
reactions and key species during graphene growth. This
approach is useful for identifying the relevant set of species
and reactions to consider in a higher-dimensional model. The
one-dimensional and two-dimensional models were developed
to predict the gas temperature and the species concentrations
for different process conditions by involving gas-phase and
surface reaction mechanisms. The 0D, 1D and 2D models are
validated by comparison with experimental data obtained from
atomic and molecular emission spectra, providing insight into
graphene growth under specific plasma conditions.
Recent Publications
1. A Mehedi, B Baudrillart, D Alloyeau, O Mouhoub,
C Ricolleau, V D Pham, C Chacon, A Gicquel, J
Lagoute, and S Farhat (2016) Synthesis of graphene
by cobalt-catalyzed decomposition of methane in
plasma-enhanced CVD: Optimization of experimental
parameters with Taguchi method. Journal of Applied
Physics 120:065304.
2. G Shivkumar, S S Tholeti, M A Alrefae, T S Fisher, and A
A Alexeenko (2016) Analysis of hydrogen plasma in a
microwave plasma chemical vapor deposition reactor.
Journal of Applied Physics 119:113301.
3. D Tsyganov, N Bundaleska, E Tatarova, A Dias, J
Henriques, A Rego, A Ferraria, M V Abrashev, F M Dias,
C C Luhrs, and J Phillips (2016) On the plasma-based
growth of ‘flowing’ graphene sheets at atmospheric
pressure conditions. Plasma Sources Science and
Technology 25:015013.
Biography
K Pashova studied Chemical Engineering at University of Chemical Technol-
ogy and Metallurgy Sofia, Bulgaria, and obtained her MSc degree in Chem-
ical and Process Engineering from University of Chemical Technology and
Metallurgy, Sofia, Bulgaria. She is currently a PhD student in the group of Dr.
Samir Farhat at Laboratoire des Sciences des Procédés et des Matériaux,
CNRS, LSPM – UPR 3407, Université Paris 13, France. Her research inter-
ests include the synthesis of nanomaterials by Microwave plasma chemical
vapor deposition and induction; plasma diagnostics and plasma modeling.
katya.pashova@lspm.cnrs.frGrowth of graphene by plasma-assisted chemical
vapor deposition synthesis, modeling and
diagnostics
K Pashova
1, 2
, I Hinkov
2
, X Aubert
1
, S Prasanna
1
, F Bénédic
1
and
S Farhat
1
1
LSPM, CNRS – UPR 3407, Université Paris 13, France
2
Université de Technologie Chimique et de Métallurgique, Bulgaria
K Pashova et al., Nano Res Appl 2018, Volume 4
DOI: 10.21767/2471-9838-C7-027