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Nano Research & Applications
ISSN 2471-9838
September 11-12, 2017 Amsterdam, Netherlands
20
th
International Conference on
Advanced Nanotechnology
Notes:
Advanced Nano 2017
Improved SWIR photo-detection in the context of
sub-wavelength structuration
T
he extreme light confinement provided by sub-
wavelength metal-dielectric structures pushes
towards revisiting the design rules of the photo-
detectors. Furthermore, introducing absorbing layers
in optical nano-resonators demands a dedicated
electromagnetic
design.
Developing
together
semiconducting heterostructures and optical nano-
antennas opens the way for performance improvements
and new functionalities, introducing very promising
features such as ultra-thin absorbing layers and device
area much smaller than its optical cross-section.
High responsivity, high-speed behavior, and carved
optical response are among the expected properties
of this new generation of photo-detectors. In this talk,
I present a GMR InGaAs photo-detector dedicated for
FPA applications as an illustration of this global design.
I discuss the cross-linked properties of the optical and
semiconductor structures. Experimental results show at
λ=1.55 μm an EQE of 75% and a specific detectivity of
1013 cm√Hz.W-1.
Biography
Jean-Luc Pelouard is a French Physicist and Researcher. His achievements
include research of feasibility of InP-based heterojunction bipolar transistors and;
development of first InAPGaAs/InGaAs heterojunction bipolar transistor.
jean-luc.pelouard@c2n.upsaclay.frJean-Luc Pelouard
Université Paris-Saclay, France
Jean-Luc Pelouard, Nano Res Appl 2017, 3:3
DOI: 10.21767/2471-9838-C1-001