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Laser Optics & Photonics and Atomic & Plasma Science 2018
J u l y 1 6 - 1 7 , 2 0 1 8
P r a g u e , C z e c h R e p u b l i c
Page 55
American Journal of Computer Science and Information Technology
ISSN: 2349-3917
E u r o S c i C o n J o i n t E v e n t o n
Laser Optics & Photonics and
Atomic & Plasma Science
III-nitride based semiconductor materials have attracted interest since they
have excellent physical, electrical, and optical properties, and their high
chemical and thermal stability as compared to traditional III-V semiconductors.
The UV capabilities of III-nitride based semiconductor materials have special
attraction for civilian applications such as air and water sterilization, efficient
white lighting, high density optical data storage and military applications such
as biological agent detection and non-line-of-sight communication etc. In last
10 years AlN and AlGaN have received a great deal of attention for use as a
template layer for deep UV (DUV) emitter and detector applications because
of their promising features such as UV transparency, good thermal stability
and high thermal conductivity. Generally, the surface morphology and defect
density of AlGaN and the upper quantum-well active layer of DUV devices
depend significantly on the crystalline quality of the underlying AlN template;
therefore, obtaining AlN with a smooth surface and low threading dislocation
(TD) density is critical to improve DUV device performance. In this study we
have investigated the effects of pulsed MOVPE growth of AlGaN epilayers on
structural, morphological and optical properties.
Biography
Ilkay Demir has completed his PhD fromCumhuriyet University-
Turkey. He spent a year during his PhD at Center for Quantum
Devices-Northwestern University under the supervision of Prof.
Manijeh Razeghi. He is working at Nanophotonics Research
and Application Center, Cumhuriyet University as an Assistant
Professor. He has published 12 papers in reputed journals and
more than 40 proceedings at the international conferences. He
has been awarded the Young Scientist Award at the European
Materials Research Society (E-MRS) 2016 Spring Meeting in
Lille, France.
Pulsed MOVPE growth of high quality AlGaN epilayers for
ultraviolet LED applications
I Demir1, Ryan McClintock2, Y Kocak3, I Altuntas1, A Emre
Kasapoglu, E Gur3, S Elagoz1 and M Razeghi2
1Cumhuriyet University, Turkey
2Northwestern University, USA
3Ataturk University, Turkey
I Demir et al., Am J Compt Sci Inform Technol 2018, Volume 6
DOI: 10.21767/2349-3917-C1-002