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Crystallography 2018
Structural Chemistry & Crystallography Communication
ISSN: 2470-9905
Page 66
June 04-05, 2018
London, UK
3
rd
Edition of International Conference on
Advanced Spectroscopy,
Crystallography and Applications
in Modern Chemistry
T
in-doped indium oxide (ITO) is considered as one of the most
important transparent conducting oxide (TCO) materials used
in the fabrication of optoelectronic devices such as light-emitting
diodes (LED), solar cells, flat panel displays, sensors, etc. Diverse
routes to produce highly conductive and transparent ITO thin
films have been developed to date. ITO film is still dominant in the
market because of its mature technology, though other materials
have been researched to replace it on some flexible devices.
Recently, the nanoscal structures (e.g., nanorods, nanowires,
nanotetrapods, and nanobelts) of semiconducting metal oxides
have attracted much attention due to the high surface-volume
ratio, excellent photoelectric properties and various potential
applications. In our previous study, high conductivity and
transparency of the ITO nanowires improved light extraction
efficiency in blue and green LEDs, and bipolar resistive switching
behavior of the ITO nanowire networks was observed. There
are many different methods to growth ITO nanowires, such as
chemical vapor deposition, chemical synthesis, obliqueincidence
electron-beam (e-beam) deposition, sputtering, and thermal
treatment. But the most stable and economical techniques are
e-beam deposition and sputtering. Sputtering deposition is one
of the most favorable and facile techniques in terms of the scale-
up and mass production. However, synthesis of high quality ITO
nanowires by sputtering has not been demonstrated. The direct
current (DC) sputtering resulted in relatively low density of ITO
whiskers and the growth rate was slow, so the radio-frequency
(RF) sputtering is needed to study for wide application.
liqiang2014@mail.xjtu.edu.cnTHE FABRICATION OF ITO NANOWIRES BY RF-SPUTTERING
Qiang Li
Xi’an Jiaotong University, China
Struct Chem Crystallogr Commun 2018, Volume 4
DOI: 10.21767/2470-9905-C1-006