advanced-materials-nano-engineering-2018-posters

Page 78

Volume 4

December 10-12, 2018

Rome, Italy

Nano Research & Applications

ISSN: 2471-9838

Advanced Materials 2018

Nano Engineering 2018

JOINT EVENT

International Conference on

Advanced Materials

and Simulation

Edition of International Conference on

Nano Engineering &

Technology

he growing need for the integration of an increasing number

of functions into the new generation of portable devices

contributes to overcrowding of printed circuit boards. In this

context, the miniaturization of discrete components is imperative

to maintain a manageable size of the printed circuit boards. The

capacitors, present in our cell phones today, occupy more than

50% area of all discrete components. There is thus a strong

interest in going towards the densification and the integration

of those components. The success of such integration relies

on the use of both high dielectric permittivity materials and a

suitable stacking architecture. Lead zirconate titanate (PZT) in

decoupling multiple metal-insulator-metal (multi-MIM) stacks is

a good candidate for the new generation of integrated capacitors.

However, capacitor performance is heavily affected both by

the PZT compositions and the quality of the interface with the

electrodes. Therefore, it is important to engineer surface (PZT)

and interface (Pt/Ru/PZT) physical chemistry which does not

degrade the multi-MIM performance. This research has provided

valuable information on the correlation of PZT surface properties

and electrical responses from Pt/Ru/PZT (220 nm)/Pt presented

in Figure 1. Operando HAXPES methodology showed in Figure 2,

made it possible to investigate lead (Pb) excess precursors in PZT

sol-gel solution and post metallization annealing (PMA) impact

on the electrical functioning of Pt/Ru/PZT/Pt stacks. This work is

a new step towards a complete understanding on the behaviour

of the interface between electrodes and the PZT ferroelectric,

in device-like multi-MIM or 3D-MIM heterostructures, in terms

of electronic properties, capacitance density, loss tangent and

breakdown field (reliability).

gueyeibrahima001@hotmail.fr

I Gueye

1,2

, G Le Rhun

1,2

, O Renault

1,2

, E Defay

and

N Barrett

University Grenoble Alpes, France

CEA-Leti, France

Luxembourg Institute of Science and Technology, Luxembourg

SPEC, France

Nano Res Appl 2018, Volume 4

DOI: 10.21767/2471-9838-C7-028

Optimization of physical chemistry of the

(PZT) interface for future high capacitance

density devices