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Laser Optics & Photonics and Atomic & Plasma Science 2018

J u l y 1 6 - 1 7 , 2 0 1 8

P r a g u e , C z e c h R e p u b l i c

Page 114

American Journal of Computer Science and Information Technology

ISSN: 2349-3917

E u r o S c i C o n J o i n t E v e n t o n

Laser Optics & Photonics and

Atomic & Plasma Science

B

lack phosphorus (BP) is a new two-dimensional semiconductor consisting of a weak van der Waals interlayer interaction and

strong in-plane bonds. BP has high carrier mobility and tunable band gap from 0.3 to 2.0 eV, offering excellent performances

for electric and optoelectronic devices. However, thin BP flakes are difficult to be fabricated. Here we report a controllable

thinning method by using hydrogen plasma etching to thin down mechanically exfoliated BP flakes. Atomic force microscope,

optical microscopy and Raman techniques was used to identify process conditions. Not only the thickness of the BP flakes can

be controlled, but also the defects of the exposed BP surface are removed after plasma treatment. It is expected to improve the

electrical performance of BP based field-effect transistor. This method provides a new way to fabricate BP-based electronic and

optoelectronic devices in the future.

xf.yu@siat.ac.cn

Plasma treatment of black phosphorus flakes

Xue-Feng Yu

1

and Wan Li

1, 2

1

Center of Biomedical Materials and Interfaces, Shenzhen Institutes of Advanced Technology,

Chinese Academy of Sciences, China

2

City University of Hong Kong, China

Am J Compt Sci Inform Technol 2018, Volume 6

DOI: 10.21767/2349-3917-C1-003