49 / 53
Laser Optics & Photonics and Atomic & Plasma Science 2018
J u l y 1 6 - 1 7 , 2 0 1 8
P r a g u e , C z e c h R e p u b l i c
Page 111
American Journal of Computer Science and Information Technology
ISSN: 2349-3917
E u r o S c i C o n J o i n t E v e n t o n
Laser Optics & Photonics and
Atomic & Plasma Science
P
lasmas are used in numerous applications as the sources of different reactive species like N, O, H, OH, and H
2
O
2
. Reactions
between these reactive species with atoms and molecules of solids could be used for functionalization of solid surfaces.
Specifically to low temperature plasmas, also the functionalization of temperature sensitive materials is possible as plasma
temperature does not rise remarkably over room temperature. Reasonable gas composition and choice of plasma source allow
production of set of reactive species needed for specific application. Usually the main gas in these gas mixtures is an inert gas,
most frequently Ar or He, as molecular additive often small percentage of gases like N
2
, O
2
or H
2
is added. In respect of industrial
application, Ar is preferable buffer gas as it is remarkably cheaper than He and excited states of Ar can actively participate in the
production of reactive species while quenching of these species by Ar is usually negligible. In this work RF capacitively coupled
middle-pressure discharge in Ar/ N
2
/ H
2
mixtures was used for functionalization of a semi-conductor GaAs surface. Fast surface
oxidation of GaAs surface introduces high defect density and deteriorates device performance. One possibility to passivate GaAs
surface is to form thin layer of GaN on the GaAs surface by using N
2
containing plasmas as a source of active nitrogen species.
Addition of H
2
to the mixture should decrease target surface oxidation and thus enhances nitridation efficiency. Present work
focused on the characterization of mid-pressure Ar/N
2
/H
2
plasma used for the remote nitridation of GaAs. Input power, electron
concentration, electric field strength and mean electron energy were determined on the basis of electrical measurements. Gas
temperature and concentration of Ar atoms in 1s states were determined from spectral measurements. The treated GaAs samples
were analysed by using XPS technique.
jyri.raud@ut.eeirPlasma surface interaction: passivation of solid
surfaces
J Raud, I Jogi, R Talviste and J Aarik
Institute of Physics, University of Tartu, Estonia
Am J Compt Sci Inform Technol 2018, Volume 6
DOI: 10.21767/2349-3917-C1-003