Previous Page  50 / 53 Next Page
Information
Show Menu
Previous Page 50 / 53 Next Page
Page Background

Laser Optics & Photonics and Atomic & Plasma Science 2018

J u l y 1 6 - 1 7 , 2 0 1 8

P r a g u e , C z e c h R e p u b l i c

Page 112

American Journal of Computer Science and Information Technology

ISSN: 2349-3917

E u r o S c i C o n J o i n t E v e n t o n

Laser Optics & Photonics and

Atomic & Plasma Science

P

orous silicon has attracted great interests in recent years due to its unique opto-electronic properties. The nanoscale sponge-

like structure of porous silicon enhances the quantum confinement effect and resulting in faster carrier transport, enhanced

photo-luminescence efficiency and optical nonlinearities in comparison with conventional crystalline silicon. These improvements

lead to a wide range of potential applications in the field of optical sensing, energy conservation and photonic devices. Among all

the applications, the enhanced nonlinearities of porous silicon can be either an issue or an advantage. For a better understanding

of the nonlinear properties, our work explores the self-focusing and two photon absorption process in free-standing porous

silicon thin films by employing z-scan technique in short-infrared wavelength region. In addition, pump-probe technique has also

been used to investigate the influence of free carrier plasma effect on the third order nonlinearities.

rxw593@bham.ac.uk

Influence of free carrier plasma effect on third

order nonlinearities in porous silicon thin films

Rihan Wu and Andrey Kaplan

University of Birmingham, UK

Am J Compt Sci Inform Technol 2018, Volume 6

DOI: 10.21767/2349-3917-C1-003