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Nano Research & Applications
ISSN 2471-9838 Advanced Nano 2017
Notes:
Page 43
September 11-12, 2017 Amsterdam, Netherlands
20th International Conference on
Advanced Nanotechnology
Electrical properties of single ZnO nanowires
prepared by wet and dry methods
Costas A, Florica F, Kuncser A, Preda N and Enculescu I
National Institute of Materials Physics, Romania
In the last decades, nanowires have become the building
blocks for new nanotechnology devices. Compared
to bulk materials, nanowires have high aspect ratio and
unique electrical, optical and magnetic properties that can
be easily tuned by controlling the parameters involved
in the growth process. ZnO is an n type semiconductor
material with a direct wide band gap (3.3 eV) and a large
exciting binding energy (60 meV) that crystallizes in two
main phases, hexagonal wurtzite and cubic zinc blende.
ZnO nanowires are the perfect candidates for many
applications, such as gas sensor, light-emitting diodes,
field effect transistors, photo-detectors, photocatalysts,
solar cells and many others. In this work, arrays of ZnO
nanowires have been prepared using wet and dry methods
(electrochemical deposition, chemical bath deposition and
thermal oxidation in air). The structural (X-ray diffraction,
transmission electron microscopy), optical (reflection,
photoluminescence), morphological (scanning electron
microscopy), compositional (energy-dispersive X-ray
spectroscopy) and electrical properties (current-voltage
characteristics) were investigated in order to increase
their performance in different applications. By employing
lithographic techniques (photolithography and electron
beam lithography) and thin films deposition techniques,
single ZnO nanowires prepared by wet and dry methods,
were integrated into devices like field effect transistors.
We observed that the growth method influence the
structural, morphological, optical and electrical properties
of the nanowires. Thus, the method used to synthesize
the nanowires represents the key in obtaining high
performance electronic devices.
Biography
Costas A has completed her PhD at University of Bucharest, Romania. She is
a young Researcher with 10 publications that have been cited over 20 times,
and her publication H-index is four. She is currently working as a Researcher
at National Institute of Materials Physics and she is involved as a team member
in more than five national research projects.
Costas A et al., Nano Res Appl 2017, 3:3
DOI: 10.21767/2471-9838-C1-002