advanced-nano-2017-scientifictracks-abstracts

Nano Research & Applications

ISSN 2471-9838

Advanced Nano 2017

Page 46

September 11-12, 2017 Amsterdam, Netherlands

International Conference on

Advanced Nanotechnology

Investigation of the effect of indium and

arsenic on the photoluminescence properties

of InGaPN and GaAsPN solar cell

H Albalawi, S Almosni, H Vinicius, Y Gobato, C Cornet

and

M Henini

Nottingham University, UK

oncentrated multi-junction solar cells (MJSC)

which are grown by either molecular beam epitaxy

(MBE) or metalorganic vapour phase epitaxy (MOVPE)

have the highest efficiencies of photovoltaic (PV). The

optical properties of both bulk GaAsPN and InGaPN,

which are grown on GaP have been investigated using

photoluminescence (PL) for solar cell applications and

compared with that of GaPN layers. The target energy

has to be reached is 1.7~1.8 eV for solar cells. InGaPN

shows a great PL intensity at this energy under 140K.

Indeed, S-shape was observed which is mainly due to the

fluctuation of band gap energy related to In and N content.

In contrast, GaAsPN presents lower intensity at the same

conditions. GaAsPN presented poor behaviour at room

temperature. Rapid thermal annealing (RTA) under 800

°C for 5 minutes was done to both samples to carry out the

effect of it. RTA helps to treat the PL intensity by improve

it but the energy peak is red shifted.

Biography

Hind Albalawi is a PhD Researcher at University of Nottingham, UK. She

completed her MSc in Renewable Energy and Architecture at Nottingham

University, UK. She is working mainly on semiconductors for solar cells.

H Albalawi et al., Nano Res Appl 2017, 3:3

DOI: 10.21767/2471-9838-C1-002