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Volume 3, Issue 4 (Suppl)
Nano Res Appl
ISSN: 2471-9838
November 07-08, 2017 Singapore
International Meeting on
Advanced Nanomaterials and Nanotechnology
Nanomaterials Meetings 2017
November 07-08, 2017
Page 24
Integration of quantum dots photo-sensor with quantum dots LED
R
ecently, the photo thin film
transistor (TFT) with colloidal
quantum dots (QD) has been
investigated deeply. This type of
photo-TFT has high responsivity,
high detectivity and tunable
detecting wavelengths. Quantum
dots LED is also mentioned as
a promising display with high
efficiency, saturated color and
low cost. Because both QD photo
sensors and QD LEDs can be
fabricated with solution process, an
interactive device with QD photo-
TFTs and QD LEDs is studied
in this work. Because PbS QDs and Ge QDs show strong absorption in infra-red (IR)
waveband, it is used as the active materials for IR sensor in this work. CdSe/ZnS quantum
dot has extraordinary properties of light emission, so it is used as light emitters in the QD
LED. To improve the performance of photo-TFT, the QDs are deposited on the active layer
to increase the photoconductivity under illumination. For the QD LED device, the ETL,
HTL and device structure are optimized to decrease the driving current. The structure of
integrated devices is shown in Fig.1. Because the photo current is amplified by TFT, the
responsibility of QD photo-sensor is about 10
4
A/W. For the QD LED developed in this
paper, the power efficiency is about 30 lm/W for green light. The peak brightness of green
light is as high as 10,060 cd/m
2
.
Recent Publications
1. QQHuang, J Y Pan, Y N Zhang, J Chen, Z Tao, C He, K F Zhou, Y Tu andWLei (2016)
High-performance quantum dot light- emitting diodes with hybrid hole transport
layer via doping engineering. Opt. Express; 24: 25955.
2. J Y Pan, J Chen, D W Zhao, Q Q Huang, Q Khan, X Liu, Z Tao, Z C Zhang and W Lei
(2016) Surface plasmon-enhanced quantum dot light emitting diodes by incorporating
gold nanoparticles. Opt. Express; 24: A33.
Biography
Wei Lei is a Professor in the Department of Electronic Engineering in Southeast University, China. He was engaged
in project cooperation between Southeast University and Philips Company. He had designed a few new electron
guns for cathode ray tubes and he has also investigated the method to improve the sensitivity of deflection coil.
His research fields cover the nanomaterials for photonic detectors, field effect transistor based on nanowires, 3D
display technologies and micro-displays. He has published more than 150 hundred papers in the scientific journals
and has got 28 patents.
lw@seu.edu.cnWei Lei
Southeast University, China
Wei Lei, Nano Res Appl 2017, 3:4
DOI: 10.21767/2471-9838-C1-005
Proteomics Meeting 2017
Figure-1: QD photo-TFT is integrated with QD LED.