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Volume 4
Nano Research & Applications
ISSN: 2471-9838
Page 52
August 16-18, 2018 | Dublin, Ireland
&
JOINT EVENT
12
th
Edition of International Conference on
Nanopharmaceutics and Advanced Drug Delivery
25
th
Nano Congress for Future Advancements
Nano Congress 2018
&
Nano Drug Delivery 2018
August 16-18, 2018
Epitaxial oxides on silicon for nanoelectronic applications
T
he ability to integrate crystalline metal oxide dielectric layers into silicon structures can open the way for a variety of
novel applications which enhances the functionality and flexibility ranging from high-K replacements in future MOS
devices to oxide/silicon/oxide heterostructures for nanoelectronic application in quantum-effect devices. We present results
for crystalline gadolinium oxides on silicon grown by solid source molecular beam epitaxy. The dielectric properties of such
oxides are sensitive to small variations in structure and symmetry. It is known that thin layers of crystalline rare earth oxides
can exhibit significant larger dielectric constants compared to bulk materials. We will explain these effects by strain induced
structural phase deformations. First, we will report on the dependence of the dielectric constant on layer thickness for epitaxial
Gd
2
O
3
on Si (111). Controlling the oxide composition in ternary (Gd1-xNdx)
2
O
3
thin films enables us to tune the lattice
mismatch to silicon, and thus the strain-induced variation in the dielectric constants of the layer. We will finally demonstrate
different approaches to grow Si nanostructures embedded into crystalline rare earth oxides. By efficiently exploiting the growth
kinetics one could create nanostructures exhibiting various dimensions, ranging from three dimensionally confined quantum
dots to the quantum wells, where the particles are confined in one of the dimensions. Double-barrier structures comprising
epitaxial insulator as barriers and Si as quantum-well are attractive candidate for resonant tunneling devices. Embedded Si
quantum dots exhibit excellent charge storage capacity with competent retention and endurance characteristics suitable for
non-volatile memory device applications.
Biography
H Jörg Osten has studied Physics in Poland. First he was working at the Institute for Physical Chemistry in Berlin in the field of Radio-Frequency Spectroscopy. In 1988, he
joined the Institute of Semiconductor Physics (IHP) in Frankfurt, Germany. In 2002, he became the Director of the Institute Electronic Materials and Devices at the Leibniz
University of Hannover, Germany, where he also holds a Chair for Electronic Materials and Technology. He has published more than 270 papers and gave more than 80
invited and 200 contributed talks at international conferences.
osten@mbe.uni-hannover.deH Jörg Osten
Leibniz University Hannover, Germany
H Jörg Osten, Nano Res Appl 2018, Volume 4
DOI: 10.21767/2471-9838-C3-013