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Materials Congress 2018
Page 52
Nano Research & Applications
ISSN: 2471-9838
W o r l d C o n g r e s s o n
Materials Science & Engineering
A u g u s t 2 3 - 2 5 , 2 0 1 8
Am s t e r d a m , N e t h e r l a n d s
T
he effect of Ga concentration on electrical properties of diodes with InP
quantum dot lasers as an active region grown on GaAs substrates are
investigated. The device structures in this study contains self-assembled InP
quantum dots which were covered with GaxIn(1-x)P layers have different Ga
concentration varies as 0.54, 0.56 and 0.58 causing a tensile strains in the
structures. This work includes important parameters of electrical properties
such as series resistance, ideality factor and reverse saturation current density.
These parameters are measured from the current-voltage characteristic for
different structures over a wide temperature range starting from 77 K to 400
K. The series resistance shows a decrease with increasing temperature until
225 K for all studied structures and above that, the series resistance is slightly
increased with temperature. Also, the series resistance for any structures
at high temperatures shows slightly higher values for the structure with
higher Ga concentration. The ideality factor, for the three studied structures,
decrease with increasing temperature until 170 K. Above 200 K, the ideality
factor is almost constant within 1.9-2.1 which implies that the effect of Ga
concentration on the ideality factor does not appeared at high temperatures.
However, this effect on reverse saturation current density does not exist at
low temperatures but it does at high temperatures. The ideality factor at low
temperatures is low in the structure with high Ga concentration. Furthermore,
the reverse saturation current density is also low in structure containing high
Ga concentration and only at high temperatures due to the high number of
defects.
Biography
M S Al-Ghamdi completed his PhD at Cardiff University UK in
2010. Later he returned to Saudi Arabia where he got position
at King Abdulaziz University, as an Assistant Professor.
His research interests includes the Design and Fabrication
of Semiconductor Devices Laser Diode and Studies the
Optoelectronic and Electrical Properties of these Devices by
Measuring their Absorption, Spontaneous, Stimulated Emission
Spectra, Ideality Factor, Barrier Height and Series Resistance.
The current research topics include Red Emitters Quantum Dot
Laser Diode which used in Photodynamic Therapy of Cancer
and also used in the Manufacture of Dual Wavelength Sources.
He is a member of IEEE and OSA societies.
msalghamdi@kau.edu.saEffect of Ga concentration on electrical properties of InP
quantum dot laser diode structures
M S Al-Ghamdi
1,2
, M Al- Sayyadi
1
and H Alsulami
1
1
King Abdulaziz University, Saudi Arabia
2
University of Jeddah, Saudi Arabia
M S Al-Ghamdi et al., Nano Res Appl 2018, Volume: 4
DOI: 10.21767/2471-9838-C4-018