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Materials Congress 2018

Page 51

Nano Research & Applications

ISSN: 2471-9838

W o r l d C o n g r e s s o n

Materials Science & Engineering

A u g u s t 2 3 - 2 5 , 2 0 1 8

Am s t e r d a m , N e t h e r l a n d s

C

apacitive deionization (CDI) is a prospective desalination technology,

which can be operated at low voltage, low temperature and potentially

consume low energy for brackish water desalination. To obtain the optimal

electrosorption, an electrode should possess high electrical conductivity, large

surface area, good wettability, highly mesoporous structure which provide

efficient pathways for ion distribution. In this study, a 3D structure graphene

was fabricated using hydrothermal method which is assisted with microwave

treatments to form 3D rGO (Gr-Mw-Hyd). Physical characterizations such

as SEM, TEM, Raman, FTIR, XPS, XRD, and BET have been used to study

the physicochemical properties of the samples. Among them, the Gr-Mw-

Hyd samples have excellent specific capacitance (189.2 F/g) and ultrahigh

electrosorption capacity (28.5 mg/g) for the desalination of ca. 500 mg/L

NaCl. This may be attributed to the fact that Gr-Mw-Hyd samples have lower

resistance and higher conductivity than other samples which are fabricated

by only using hydrothermal method without microwave assistance (Gr-Hyd)

and traditional reflux method (Gr-Reflux). Therefore, the prepared Gr-Mw-Hyd

samplesmay be one of promising electrode for CDI in the practical applications.

Biography

Shou-Heng Liu currently is an Associate Professor in

Department of Environmental Engineering, National Cheng

Kung University, Taiwan. He is the Associate Director of

Sustainable Environment Research Center in Taiwan. He has

published more than 65 papers in reputed journals.

shliu@mail.ncku.edu.tw

Preparation of 3D graphene with microwave-hydrothernal

assistance for ultrahigh performance of capacitive deionization

Wahid Dianbudiyanto and Shou-Heng Liu

National Cheng Kung University, Taiwan

Wahid Dianbudiyanto et al., Nano Res Appl 2018, Volume: 4

DOI: 10.21767/2471-9838-C4-018