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Laser Optics & Photonics and Atomic & Plasma Science 2018
J u l y 1 6 - 1 7 , 2 0 1 8
P r a g u e , C z e c h R e p u b l i c
Page 37
American Journal of Computer Science and Information Technology
ISSN: 2349-3917
E u r o S c i C o n J o i n t E v e n t o n
Laser Optics & Photonics and
Atomic & Plasma Science
Alev Kizilbulut et al., Am J Compt Sci Inform Technol 2018, Volume 6
DOI: 10.21767/2349-3917-C1-002
In recent years, Carbon (C) has attracted much attention for obtaining p type
GaAs and AlGaAs because of its low diffusion coefficient, ability to be doped
to high levels, absence of memory effect. Furthermore, it has widely used
for optical and electronical devices such as vertical cavity surface emitting
lasers (VCSELs), heterojunction bipolar transistors (HBTs) and edge emitting
laser diode structures. High doping concentration of around ~1019-10 20 cm-3 is
required for ohmic contact layers. However, degradation of surfacemorphology
also occurs at high doping concentrations and some hillocks can be seen
the wafer surface. In this study, we have grown carbon p-GaAs staircase
structures by using vertical type MOCVD reactor at the growth pressure of
50 mbar for obtain high doping concentration with good surfaces. Arsine
(AsH3) and trimethylgallium (TMGa) were used as precursors for arsenic and
gallium, respectively. Carbon tetra bromide (CBr4) was used for p-type dopant
precursor. We have investigated the effect of growth temperature, V/III ratio,
CBr 4 flow to hole concentration of p-GaAs. Carrier concentration of p-GaAs
staircase samples was performed by ECV measurements.
Biography
Alev Kizilbulut is PhD student at Cumhuriyet University in Solid
State Physics. She is working at ERMAKSAN Optoelectronic
R&D Center as a researcher. Her interests are the growth with
MOCVD and structural, electrical and optical characterizations
of semiconductor devices.
The role of growth temperature, V/III ratio and CBr4 flow on
carbon doped p-GaAs epilayers
Alev Kizilbulut1, 2, Mehmet ErkuS 1, 2, Nizam Muzafferoglu1 and
Sezai Elagoz 2
1Optoelektronic Research and Application Center, ERMAKSAN, Turkey
2Nanophotonic Research and Application Center, Cumhuriyet University, Turkey