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Laser Optics & Photonics and Atomic & Plasma Science 2018
J u l y 1 6 - 1 7 , 2 0 1 8
P r a g u e , C z e c h R e p u b l i c
Page 36
American Journal of Computer Science and Information Technology
ISSN: 2349-3917
E u r o S c i C o n J o i n t E v e n t o n
Laser Optics & Photonics and
Atomic & Plasma Science
I Altuntas et al., Am J Compt Sci Inform Technol 2018, Volume 6
DOI: 10.21767/2349-3917-C1-002
GaN based materials including light emitting diodes, blue laser diodes and
high-power microwave transistors have received much attention over the
past few years. An important problem of these structures is the high levels of
structural defects, mostly dislocations, due to the lack of a suitable lattice-
matched substrate. So far, the substrate of choice has been mainly sapphire
(Al2 O3) substrates, which has a large lattice mismatch with GaN or AlN. As a
result, (0001) GaN layers epitaxially grown on sapphire subtrates include high
concentrations of misfit and threading dislocations. In this study, epitaxial GaN
layers have been grown on patterned sapphire substrates by using an MOCVD
system and high resolution XRD scans are performed to investigate the effect
of patterned sapphire substrates on the dislocation density.
Biography
I Altuntas is pursuing PhD from Cumhuriyet University, Physics
Department. He is the researcher of Nanophotonics Research
and Application Center, Department of Nanotechnology Engi-
neering.
Growth and characterization of epitaxially grown GaN layer on
patterned sapphire substrate
I Altuntas1, 2, I Demir1, 2, A A Kizilbulut3, B Bulut3 and S Elagoz1, 2
1Cumhuriyet University, Turkey
2Nanophotonic Research and Application Center, Cumhuriyet University, Turkey
3ERMAKSAN optoelectronic AR-GE, Turkey