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Laser Optics & Photonics and Atomic & Plasma Science 2018
J u l y 1 6 - 1 7 , 2 0 1 8
P r a g u e , C z e c h R e p u b l i c
Page 91
American Journal of Computer Science and Information Technology
ISSN: 2349-3917
E u r o S c i C o n J o i n t E v e n t o n
Laser Optics & Photonics and
Atomic & Plasma Science
I
n this work, an experimental Si
0.73
Ge
0.27
solar cell has been modelled. The photovoltaic characteristics of the Si
0.73
Ge
0.27
solar cell
are in good agreement to its experimental counterpart. Afterwards, a double junction CGS/Si
0.73
Ge
0.27
tandemsolar cell with 24.1%
efficiency has been designed. The effects of Ge concentration on the CGS/Si
1-x
Ge
x
solar cell performance have been analysed.
Additionally, the band gap combination of CuIn1-yGa
y
Se/Si
1-x
Ge
x
structure has been studied. Our findings indicate that CuIn1-
y
Ga
y
Se/Si
1-x
Ge
x
tandem cell with 0.7<y<1 and 0<x<0.7 can achieve acceptable efficiency, and the optimized CGS/Si device with
26.1% efficiency is proposed. In CGS/Si
0.73
Ge
0.27
tandem cell, the current matching is obtained when the CGS absorber thickness
of the top cell is 1 µm and the Si
0.73
Ge
0.27
absorber thickness of the bottom cell is 1.9 µm. The current matching condition for this
device degrades the fill factor, although increases the current, so the device does not achieve maximum output power. An optimal
thickness of 1.8-2 µm for CGS layer can adjust the Jsc and FF for the maximum efficiency of 24.3%, it has improved 2% compared
to the current matching CGS thickness (1 µm).
Samaneh.Sharbati@semnan.ac.irirDesign of CuIn1−yGaySe2/Si1-xGex tandem solar cells
Samaneh. Sharbati, Iman Gharibshahian and Ali A Orouji
Semnan University, Iran
Am J Compt Sci Inform Technol 2018, Volume 6
DOI: 10.21767/2349-3917-C1-003