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Laser Optics & Photonics and Atomic & Plasma Science 2018
J u l y 1 6 - 1 7 , 2 0 1 8
P r a g u e , C z e c h R e p u b l i c
Page 87
American Journal of Computer Science and Information Technology
ISSN: 2349-3917
E u r o S c i C o n J o i n t E v e n t o n
Laser Optics & Photonics and
Atomic & Plasma Science
A
lGaN light-emitting diodes (LEDs) have been studied for highly efficient light sources in deep ultraviolet (DUV) range. In
widely used c-plane AlGaN, the spontaneous and piezoelectric polarization produces a strong electric field along the growth
direction, which degrades the performance of the LEDs. To overcome the polarization problem, growth on semipolar/nonpolar
substrates has been carried out extensively. However, expected properties have not been clearly observed for AlGaN alloy in DUV
range because of the low crystalline quality. Here, we report the improved crystalline quality of semipolar AlN grown on m-plane
sapphire by using a high-temperature annealing process.
masafumi.jo@riken.jpHigh-temperature annealing for improved crystalline
quality of semipolar AlN on m-plane sapphire
Masafumi Jo, Hideki Hirayama
RIKEN, Japan
Am J Compt Sci Inform Technol 2018, Volume 6
DOI: 10.21767/2349-3917-C1-003