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Nano Research & Applications
ISSN 2471-9838
Advanced Nano 2017
Page 73
September 11-12, 2017 Amsterdam, Netherlands
20
th
International Conference on
Advanced Nanotechnology
A 2.3 (GHz) single electron transistor low noise
amplifier for microwave applications
Gehad M Abdellatif, Maha A Sharkas and Abdel Monem A Nasser
AASTMT Alexandria, Egypt
T
his work presents an endeavor to simulate a cascode
Microwave–LNA using Single Electron Transistor
(SET), which operates at a frequency of 2.3 (GHz).
This LNA is adequate for many miniaturized microwave
applications. However, in order to facilitate the simulation
process of this SET–LNA a Verilog Analog and Mixed
Signal (Verilog–AMS) SET behavioral model that is
based on a modified SPICE model was implemented.
This realization has input and output voltage reflection
coefficients of –12.628 (dB) and –8.053 (dB) respectively
while consuming a power of 0.383 (μW). It also has low
noise figure of 0.278(dB).
gehad.abdellatif@outlook.comNano Research & Applications