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Nano Research & Applications
ISSN 2471-9838 Advanced Nano 2017
Page 64
September 11-12, 2017 Amsterdam, Netherlands
20th International Conference on
Advanced Nanotechnology
Electrostatic plasma charge interactions and
their influence on film and nano-pillar growth
K S A Butcher1, 2
1Meaglow Ltd, Canada
2Macquarie University, Australia
Electrostatic effects are not commonly considered
during plasma film growth, however we have recently
shown attractive electrostatic interactions between
regions of positive charge in RF plasmas and the negative
charge of metal wetting layers can strongly influence
film morphology. By placing a grid between a remote
plasma and the substrate, the potential seen by GaN and
InN films could be controlled to either allow the growth
of metal rich nano pillars using a positive grid potential,
or films with RMS roughness of less than 2 nm with the
grid grounded. For these experiments the plasma was
remote, so that the grid was not for ion flux control: the
interactions seen were due to electrostatic potential, or
charge. Using a negative bias on the grid we also found
that residual carbon and hydrocarbon species, left over
from the decomposition of trimethyl gallium (TMG), could
be removed during GaN growth. Impurity determination by
SIMS, UV-Vis film transmission measurements, electrical
and visual observation of films is provided. The films were
grown at approximately 650 degrees C using a nitrogen
plasma source and TMG.
Nano Research & Applications