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Smart Materials Congress 2019

Nano Research and Applications

ISSN: 2471-9838

Page 50

August 01-02, 2019

Dublin, Ireland

Smart Materials and

Structures

8

th

International Conference on

Nano Res Appl 2019, Volume 05

Photosensitive inverters and light-to-frequency conversion

circuits based on transistion metal dichalcogenides field

effect transistors

Sung Hun Jin

Incheon National University, South Korea

R

ecently transisiton metal dichalcogenides (TMDCs)

such as MoS

2

, WSe

2

, MoTe

2

, WS

2

and others haved

been emerged and actively researched as one of next

generation semiconductors for extending Moore’s law.

Among a variety of novel properties for TMDCs, one of

interesting properties is to modulate energy bandgap

(Eg) in variation of number of layers. In this study, for

the improvement of noise immunity for IoT sensor

systems, photo sensitive inverters and their light-to-

frequency conversion circuts (LFCs) are proposed and

experimentally demonstrated by using the platform

comprised of an enhancement MoS

2

driver with light-

shield layers (LSLs) (or GaN FET drivers) and MoS

2

depletion load. Moreover, for energy efficient circuits,

complementary photo- sensitive inverters based on

p-type MoTe

2

and n-type MoS

2

FETs are demonstrated.

For the better understanding on performance of LFCs,

we systematically studied basic design rules on LFCs via

experimentally measured voltage transfer characteristics

of photo-sensitive inverters and their spice simulation

with their extracted model parameters based on RPI

model (i.e., SILVACO, Smart-spice; level 36). The

simulation results illustrate that key parameters of ring

osciallators (ROs) such as oscillation frequency (fosc)

and peak-to peak voltage (Vp-p) can be systematically

controlled by inverter parameters such as noise margin,

voltage gains associated with electrical parameters (i.e.,

Vth, SS, current on/off ratio, field effect mobility, etc).

In the present study, experimental implementation of

photosensitive inverters based on MoS

2

, MoTe

2

, and GaN

FETs, etc. and their systematic validation on performance

via spice simulation yield insightful design rules required

for reliable operation of LFCs, potentially contributing to

emerging IoT security systems.

shjin@inu.ac.kr