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Nanomat 2019 Nano Research & Applications
ISSN: 2471-9838 Page 27
January 28-29, 2019
Barcelona, Spain
18th Edition of International Conference on
Emerging Trends in
Materials Science and
Nanotechnology
Wide bandgap semiconductors (SiC or GaN) based devices
have shown excellent progress in recent years for high
frequency and high power electronics. Nevertheless, several
issues still needed to be addressed such as finding of an
appropriate gate insulator. Moreover, since device frequency
performance is strongly dependent on maintaining a high
geometric aspect ratio between the gate length and barrier
thickness, precise control over the thickness of gate insulators
is very important. In this context, atomic layer deposition
(ALD) is considered as a key enabling technique because
of its controlled layer-by-layer growth. Huge efforts are
nowadays devoted to the fabrication of multicomponent gate
insulators having high dielectric constants and good chemical
stability. In particular, the growth of Al2O3-HfO2 laminated
layers is among the most studied combination because of
the possibility to combine the complimentary characteristics
of the two materials. Plasma enhanced ALD growth of three
different Al2O3/HfO2 combinations has been considered:
a bilayer system of the two Al2O3 and HfO2 oxides each
having a 15 nm thickness, a nanolaminated 10 stacked Al2O3-
HfO2 bilayers with each sub-layer thickness of about 3 nm
and of a homogeneous HfAlO layer, have been fabricated.
The dielectric properties and the structural evolution upon
annealing treatment have been compared. On the basis of
all the collected data, the 10AB laminated can be considered
the most promising system. In fact, it showed an amorphous
structure before and after annealing treatments and better
dielectric behavior in terms of dielectric constant value and
charge traps amounts.
Biography
Raffaella Lo Nigro received her BSc in Chemistry cum Laude in 1996 and
in 2000 she received her PhD from Catania University. From 1996 to 2000
she acquired an advanced know-how in the field of MOCVD and in 2001
she joined the IMM-CNR as permanent researcher, where she is responsi-
ble of the research group “advanced materials for power devices and their
nanocharaterization”. Her current research interests include the synthesis of
high k dielectric by atomic layer deposition. She is author of more than 120
papers and 4 book chapters.
Atomic layer deposition growth of laminated
oxides as dielectric thin films
Raffaella Lo Nigro
Istituto per la Microelettronica e Microsistemi - CNR, Italy
Raffaella Lo Nigro, Nano Res Appl 2019, Volume 5
DOI: 10.21767/2471-9838-C1-030