American Journal of Computer Science and Information Technology

The role of growth temperature, V/III ratio and CBr4 flow on carbon doped p-GaAs epilayers

EuroSciCon Joint Event on Laser Optics & Photonics and Atomic & Plasma Science
July 16-17, 2018 Prague , Czech republic

Alev Kizilbulut, Mehmet ErkuS, Nizam Muzafferoglu and Sezai Elagoz

Optoelektronic Research and Application Center, ERMAKSAN, Turkey Nanophotonic Research and Application Center, Cumhuriyet University, Turkey

ScientificTracks Abstracts: Am J Compt Sci Inform Technol

DOI: 10.21767/2349-3917-C1-002

Abstract

In recent years, Carbon (C) has attracted much attention for obtaining p type GaAs and AlGaAs because of its low diffusion coefficient, ability to be doped to high levels, absence of memory effect. Furthermore, it has widely used for optical and electronical devices such as vertical cavity surface emitting lasers (VCSELs), heterojunction bipolar transistors (HBTs) and edge emitting laser diode structures. High doping concentration of around ~1019-1020 cm-3 is required for ohmic contact layers. However, degradation of surface morphology also occurs at high doping concentrations and some hillocks can be seen the wafer surface. In this study, we have grown carbon p-GaAs staircase structures by using vertical type MOCVD reactor at the growth pressure of 50 mbar for obtain high doping concentration with good surfaces. Arsine (AsH3) and trimethylgallium (TMGa) were used as precursors for arsenic and gallium, respectively. Carbon tetra bromide (CBr4) was used for p-type dopant precursor. We have investigated the effect of growth temperature, V/III ratio, CBr4 flow to hole concentration of p-GaAs. Carrier concentration of p-GaAs staircase samples was performed by ECV measurements.

Biography

Alev Kizilbulut is PhD student at Cumhuriyet University in Solid State Physics. She is working at ERMAKSAN Optoelectronic R&D Center as a researcher. Her interests are the growth with MOCVD and structural, electrical and optical characterizations of semiconductor devices.

E-mail: alev.kizilbulu@ermaksan.com.tr