American Journal of Computer Science and Information Technology

Plasma treatment of black phosphorus flakes

EuroSciCon Joint Event on Laser Optics & Photonics and Atomic & Plasma Science
July 16-17, 2018 Prague , Czech republic

Xue-Feng Yu and Wan Li

Center of Biomedical Materials and Interfaces, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, China City University of Hong Kong, China

Posters & Accepted Abstracts: Am J Compt Sci Inform Technol

DOI: 10.21767/2349-3917-C1-003

Abstract

Black phosphorus (BP) is a new two-dimensional semiconductor consisting of a weak van der Waals interlayer interaction and strong in-plane bonds. BP has high carrier mobility and tunable band gap from 0.3 to 2.0 eV, offering excellent performances for electric and optoelectronic devices. However, thin BP flakes are difficult to be fabricated. Here we report a controllable thinning method by using hydrogen plasma etching to thin down mechanically exfoliated BP flakes. Atomic force microscope, optical microscopy and Raman techniques was used to identify process conditions. Not only the thickness of the BP flakes can be controlled, but also the defects of the exposed BP surface are removed after plasma treatment. It is expected to improve the electrical performance of BP based field-effect transistor. This method provides a new way to fabricate BP-based electronic and optoelectronic devices in the future.

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