American Journal of Computer Science and Information Technology

Growth and characterization of epitaxially grown GaN layer on patterned sapphire substrate

EuroSciCon Joint Event on Laser Optics & Photonics and Atomic & Plasma Science
July 16-17, 2018 Prague , Czech republic

I Altuntas, I Demir, A A Kizilbulut, B Bulut and S Elagoz

Cumhuriyet University, Turkey Nanophotonic Research and Application Center, Cumhuriyet University, Turkey ERMAKSAN optoelectronic AR-GE, Turkey

ScientificTracks Abstracts: Am J Compt Sci Inform Technol

DOI: 10.21767/2349-3917-C1-002

Abstract

GaN based materials including light emitting diodes, blue laser diodes and high-power microwave transistors have received much attention over the past few years. An important problem of these structures is the high levels of structural defects, mostly dislocations, due to the lack of a suitable latticematched substrate. So far, the substrate of choice has been mainly sapphire (Al2O3) substrates, which has a large lattice mismatch with GaN or AlN. As a result, (0001) GaN layers epitaxially grown on sapphire subtrates include high concentrations of misfit and threading dislocations. In this study, epitaxial GaN layers have been grown on patterned sapphire substrates by using an MOCVD system and high resolution XRD scans are performed to investigate the effect of patterned sapphire substrates on the dislocation density.

Biography

I Altuntas is pursuing PhD from Cumhuriyet University, Physics Department. He is the researcher of Nanophotonics Research and Application Center, Department of Nanotechnology Engineering.

E-mail: ialtnts@gmail.com