Nano Research & Applications

A 2.3 (GHz) single electron transistor low noise amplifier for microwave applications

20^th International Conference on Advanced Nanotechnology
September 11-12, 2017 Amsterdam, Netherlands

Gehad M Abdellatif, Maha A Sharkas and Abdel Monem A Nasser

AASTMT Alexandria, Egypt

Posters & Accepted Abstracts: Nano Res Appl

DOI: 10.21767/2471-9838-C1-003

Abstract

This work presents an endeavor to simulate a cascode Microwaveâ��LNA using Single Electron Transistor (SET), which operates at a frequency of 2.3 (GHz). This LNA is adequate for many miniaturized microwave applications. However, in order to facilitate the simulation process of this SETâ��LNA a Verilog Analog and Mixed Signal (Verilogâ��AMS) SET behavioral model that is based on a modified SPICE model was implemented. This realization has input and output voltage reflection coefficients of â��12.628 (dB) and â��8.053 (dB) respectively while consuming a power of 0.383 (�¼W). It also has low noise figure of 0.278(dB).