ISSN : 0976-8505
The theoretical calculation for pressure dependence of electrical resistance has been carried out for Cu Doped As- Se glasses. The calculated results for the CuxAs40Se60-x glasses with x between 0 and 28% show that the resistivity of glasses continuously decreases and saturates at higher quasi-hydrostatic pressures. The results have been compared with the experimental data and yield a good description of variation of electrical resistivity with pressure
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