Atomic-Scale Characterization and Dynamics of Two-dimensional In-Se Materials

Semiconductors are currently being investigated as potential candidates for optoelectronic  and phase change memory devices. Among several IIIVI semiconductors, In-Se systems are an interesting type of materials due to their multiple phases and excellent optical properties. For example, In2Se3 is a direct bandgap material with a layered structure. There are at least five different phases of In2Se3 (α, β, γ, δ, and κ). 

Author(s): Zhongchang Wang 

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